Magneto-resistive random access memory cell with spin-dependent diffusion and state transfer

A method for performing a write operation using a spintronic Hall effect, the method comprising:

• receiving, by processing circuitry, an instruction to set a Magnetic Tunnel Junction (MTJ) element to a target state of a plurality of states, the MTJ element comprising a free structure, a pinned structure, and a tunnel barrier arranged between the free structure and the pinned structure, wherein the free structure comprises a plurality of free layers and wherein the free structure is arranged with the Spin Hall Effect (SHE) structure such that current in the SHE structure induces spin transfer into the free structure;
• and
• in response to receiving the instruction, generating, by processing circuitry, electrical current through the spin Hall effect structure to modify a resistance of the MTJ element to correspond to the target state.

A device for performing a write operation, the device comprising:

• means for receiving an instruction to set a Magnetic Tunnel Junction (MTJ) element to a target state of a plurality of states, the MTJ element comprising a free structure, a pinned structure, and a tunnel barrier arranged between the free structure and the pinned structure, wherein the free structure comprises a plurality of free layers and wherein the free structure is arranged with the Spin Hall Effect (SHE) structure such that current in the SHE structure induces spin transfer into the free structure;
• and
• means for generating electrical current through the spin Hall effect structure to modify a resistance of the MTJ element to correspond to the target state in response to receiving the instruction.