Driver for switching insulated-gate bipolar transistors with first pull-down signal and second pull-down signal

A method of controlling an insulated-gate bipolar transistor (IGBT), the method comprising:

• switching out, by a controller circuit, a first switching element to prevent a pull-up signal from flowing to a gate of the IGBT in response to an IGBT turn off switching event;
• switching in, by the controller circuit, a second switching element to create a first channel to permit a first pull-down signal to flow to the gate of the IGBT in response to the IGBT turn off switching event;
• switching in, by the controller circuit, a third switching element to create a second channel to permit a second pull-down signal to flow to the gate of the IGBT in response to the IGBT turn off switching event;
• determining, by the controller circuit, a delay threshold;
• determining, by the controller circuit, a collector to emitter voltage at the IGBT does not satisfy a threshold in response to the third switching element being switched in for a duration that exceeds the delay threshold;
• in response to determining the collector to emitter voltage at the IGBT does not satisfy the threshold, switching out, by the controller circuit, the third switching element to prevent the second pull-down signal from flowing to the gate of the IGBT.

An insulated-gate bipolar transistor (IGBT) system comprising:

• an IGBT;
• and
• a controller circuit configured to:
• switch out a first switching element to prevent a pull-up signal from flowing to a gate of the IGBT in response to an IGBT turn off switching event;
• switch in a second switching element to create a first channel to permit a first pull-down signal to flow to the gate of the IGBT in response to the IGBT turn off switching event;
• switch in a third switching element to create a second channel to permit a second pull-down signal to flow to the gate of the IGBT in response to the IGBT turn off switching event;
• determine a delay threshold;
• determine a collector to emitter voltage at the IGBT does not satisfy a threshold in response to the third switching element being switched in for a duration that exceeds the delay threshold;
• in response to determining the collector to emitter voltage at the IGBT does not satisfy the threshold, switch out the third switching element to prevent the second pull-down signal from flowing to the gate of the IGBT.