Nano-electromechanical system (NEMS) device structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Ping Chen, Carlos H. Diaz, Ken-Ichi Goto, Shau-Lin Shue, Tai-I Yang
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Abstract
A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer, wherein the beam structure includes a plurality of strip structures. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.
Claims20
A nano-electromechanical system (NEMS) device structure, comprising:
- a substrate;
- an interconnect structure formed over the substrate;
- a dielectric layer formed over the interconnect structure;
- a beam structure formed in and over the dielectric layer, wherein the beam structure comprises a plurality of strip structures when seen from a top-view, the beam structure comprises a first end with a first thickness, a second end with a second thickness and a middle portion with a third thickness between the first end and the second end, the third thickness is smaller than first thickness, and the third thickness is smaller than the second thickness;
- a cap structure formed over the dielectric layer and the beam structure;
- and
- a cavity formed between the beam structure and the cap structure.
A nano-electromechanical system (NEMS) device structure, comprising:
- an interconnect structure formed over a substrate;
- an etching stop layer formed over the interconnect structure;
- a dielectric layer formed over the etching stop layer;
- a sensing electrode formed in the dielectric layer, wherein the sensing electrode is through the etching stop layer;
- a beam structure formed in and over the dielectric layer, wherein the beam structure comprises a fixed portion and a moveable portion, the fixed portion is extended vertically, and the movable portion is extended horizontally;
- a cap structure formed over the dielectric layer and the beam structure;
- a first cavity formed between the beam structure and the cap structure;
- and
- a second cavity between the movable portion and the dielectric layer.
A nano-electromechanical system (NEMS) device structure, comprising:
- an interconnect structure formed over a substrate;
- an etching stop layer formed over the interconnect structure;
- a dielectric layer formed over the etching stop layer;
- a sensing electrode formed in the dielectric layer, wherein the sensing electrode is through the etching stop layer;
- a beam structure formed in the dielectric layer and protruded above a top surface of the dielectric layer, wherein the bean structure has an extending portion, the extending portion extends over the sensing electrode;
- and
- a cap structure formed over the dielectric layer and the beam structure.
Dependencies are inferred from the claim text.