Efficient metal-insulator-metal capacitor
AssigneeTessera, Inc.
InventorsKisup Chung, Isabel C. Estrada-Raygoza, Hemanth Jagannathan, Chi-Chun Liu, Yann A. M. Mignot, Hao Tang
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Abstract
Capacitors include a stack that has a first metallic layer formed over a substrate with at least one high domain and at least one low domain, an insulator formed over the first metallic layer, and a second metallic layer formed over the insulator. A bottom contact is formed in the substrate having a top surface that is even with a top surface of the substrate in the at least one high domain. A cap layer is formed directly on the substrate in the high domains, under the stack.
Claims17
A capacitor, comprising:
- a stack, comprising:
- a first metallic layer formed over a substrate that comprises at least one high domain and at least one low domain, where a surface of the substrate in the at least one low domain has a height that is lower than a surface of the substrate in the at least one high domain;
- an insulator formed over the first metallic layer;
- and
- a second metallic layer formed over the insulator;
- a bottom contact formed in the substrate having a top surface that is even with a top surface of the substrate in the at least one high domain;
- and
- a cap layer formed directly on the substrate in the high domains, under the stack.
A capacitor, comprising:
- a stack, comprising:
- a first metallic layer formed over a substrate that comprises at least one high domain and a plurality of low domains, where a surface of the substrate in the at least one low domain has a height that is lower than a surface of the substrate in the at least one high domain;
- an insulator formed over the first metallic layer;
- and
- a second metallic layer formed over the insulator;
- a bottom contact formed in the substrate under a first low domain of the first metallic layer, having a top surface that is even with a top surface of the substrate in the at least one high domain;
- and
- a cap layer formed directly on the substrate in the high domains, under the stack.
A capacitor, comprising:
- a stack, comprising:
- a first metallic layer formed over a substrate that comprises at least one high domain and at least one low domain, where a surface of the substrate in the at least one low domain has a height that is lower than a surface of the substrate in the at least one high domain;
- an insulator formed over the first metallic layer;
- and
- a second metallic layer formed over the insulator;
- a bottom contact formed in the substrate in electrical contact with the first metallic layer, having a top surface that is even with a top surface of the substrate in the at least one high domain;
- a cap layer formed directly on the substrate in the high domains, under the stack;
- a protective layer formed over the stack;
- a dielectric layer formed over and around the protective layer and the stack;
- and
- a top contact that penetrates the dielectric layer and the protective layer to form an electrical contact with the top metallic layer.
Dependencies are inferred from the claim text.