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US 10,593,784 B2Granted
Double patterning epitaxy Fin
AssigneeInternational Business Machines Corporation
InventorEffendi Leobandung
Life of this patent
Estimating the term…
Abstract
A structure for use in a fin of a FinFET includes a hard mask formed on a substrate. The hard mask has an opening with at least a portion of the substrate exposed therein. The structure also includes a buffer formed on the portion of the substrate exposed within the hard mask, and multiple channels formed on the substrate proximate to respective sides of the opening.
Claims8
A structure for use in a fin of a FinFET, the structure comprising:
- a hard mask formed on a substrate, the hard mask having an opening with at least a portion of the substrate exposed therein;
- a buffer formed on the portion of the substrate exposed within the opening of the hard mask;
- a plurality of channels formed on the hard mask proximate to respective sides of the opening;
- and
- at least one gate region formed on the buffer and on a portion of the hard mask between two adjacent channels of the plurality of channels.
2 more elements
Dependencies are inferred from the claim text.