Method to increase the process window in double patterning process
AssigneesSemiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
InventorQing Yang
Life of this patent
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Abstract
A method for manufacturing a reticle for double patterning includes providing a first reticle for a first patterning and a second reticle for a second patterning according to a target pattern, the first reticle having a first mask pattern, and the second reticle having a second mask pattern, the first patterning being performed before the second patterning, and forming a sub-resolution assist feature (SRAF) pattern at a gap of the first mask pattern of the first reticle. The SRAF pattern is covered by the second mask pattern of the second reticle and has a size sufficient large to enable a transfer of the SRAF pattern to a material to be patterned in the first patterning.
Claims11
A method for manufacturing a reticle used for double patterning a material, comprising:
- providing a first reticle for a first patterning and a second reticle for a second patterning according to a target pattern, the first reticle comprising a first mask pattern, and the second reticle comprising a second mask pattern, the first patterning being performed before the second patterning;
- forming a sub-resolution assist feature (SRAF) pattern at a gap of the first mask pattern of the first reticle, the SRAF pattern being covered by the second mask pattern of the second reticle and having a size sufficiently large to enable a transfer of the SRAF pattern to a material to be patterned in the first patterning.
A method for double patterning a material, comprising:
- performing a first patterning on a material layer using a first reticle, the first reticle having a first mask pattern and a sub-resolution assist feature (SRAF) pattern disposed at a gap of the first mask pattern, the SRAF pattern having a size sufficiently large to enable a transfer of the SRAF pattern to the material layer in the first patterning;
- after the first patterning has been performed on the material layer, performing a second patterning on the material layer using a second reticle, the second reticle having a second mask pattern covering the SRAF pattern.
Dependencies are inferred from the claim text.