Method for manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a first film including a first metal above a processing target member;
• forming a second film including two or more types of elements out of a second metal, carbon, and boron above the first film;
• forming a third film including the first metal above the second film;
• forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film;
• and
• processing the processing target member by performing etching using the mask film as a mask,
• wherein
• insulating films and sacrifice films are alternately stacked above a substrate in the processing target member,
• the processing of the processing target member includes forming a hole penetrating the insulating films and the sacrifice films and reaching the substrate, and
• the method further comprising:
• forming a charge storage film on an inner surface of the hole;
• forming a tunnel insulating film on a side surface of the charge storage film;
• forming a semiconductor pillar on a side surface of the tunnel insulating film;
• forming an opening part penetrating the insulating films and the sacrifice films after the forming of the semiconductor pillar;
• removing the sacrifice films by performing etching via the opening part;
• and
• forming electrode films in spaces from which the sacrifice films have been removed.

A method of manufacturing a semiconductor device, comprising:

• forming a stacked body by alternately forming first layers and second layers above a substrate;
• forming a first film including a first metal above the stacked body;
• forming a second film above the first film, the second film including at least one of carbon and boron, and the second film including the first metal;
• forming a third film including the first metal above the second film;
• forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film;
• forming a hole penetrating the first layers and the second layers and reaching the substrate by performing etching using the mask film as a mask;
• forming a charge storage film on an inner surface of the hole;
• forming a tunnel insulating film on a side surface of the charge storage film;
• and
• forming a semiconductor pillar on a side surface of the tunnel insulating film,
• the first film and the third film being lower in total concentration of carbon and boron than the second film.