Lithography patterning technique

Abstract

A lithography developing composition is disclosed. In an exemplary aspect, the composition comprises an alkaline aqueous solution having a first organic base and a second organic base, wherein the first organic base is a quaternary ammonium hydroxide with pendant groups on its side chains and the second organic base is another quaternary ammonium hydroxide with electron withdrawing groups on its side chains. In another exemplary aspect, the composition comprises an alkaline aqueous solution having an organic base that is a quaternary ammonium hydroxide with at least one electron withdrawing group on its side chains and the organic base has basicity weaker than Tetramethylammonium hydroxide (TMAH). In yet another exemplary aspect, the composition comprises an alkaline aqueous solution having an organic base that is Trimethylphenylammonium hydroxide or Benzyldimethyltetradecylammonium hydroxide.

Dependencies are inferred from the claim text.