Pattern forming method
AssigneeTokyo Electron Limited
InventorHidetami Yaegashi
Life of this patent
Estimating the term…
Abstract
Provided is a method for forming a hole pattern in a resist film. The method includes forming a resist film on a workpiece; exposing the resist film using a bright field mask; removing an unexposed portion of the resist film by supplying a first developer to the resist film and performing a negative development after the exposing the resist film; modifying a sidewall portion of the resist film after the removing the unexposed portion of the resist film; and removing an exposed portion of the resist film by supplying a second developer to the resist film and performing a positive development after the modifying the sidewall portion of the resist film. The modifying the sidewall portion of the resist film is a processing of reducing solubility of the sidewall portion of the resist film in the second developer.
Claims7
A method for forming a hole pattern in a resist film, the method comprising:
- forming a resist film on a workpiece;
- exposing the resist film using a bright field mask;
- removing an unexposed portion of the resist film by supplying a first developer to the resist film and performing a negative development after the exposing the resist film;
- modifying a sidewall portion of an intermediate exposed portion formed between the unexposed portion and an exposed portion after the removing the unexposed portion of the resist film;
- and
- removing the exposed portion of the resist film by supplying a second developer to the resist film and performing a positive development after the modifying the sidewall portion of the resist film,
- wherein the modifying the sidewall portion of the resist film includes a processing of reducing solubility of the sidewall portion of the resist film in the second developer so as to expand the intermediate exposed portion, and
- a pitch of the hole pattern is about 1/√2 times of a pitch of the bright field mask.
Dependencies are inferred from the claim text.