Extreme ultraviolet lithography system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Hui Weng, Cheng-Han Wu, Ching-Yu Chang, Chin-Hsiang Lin
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Abstract
Semiconductor systems, apparatuses and methods are provided. In one embodiment, an extreme ultraviolet lithography system includes a substrate stage configured to secure a substrate at a first vertical level, wherein the substrate is deposited with a resist layer thereon; at least one electrode positioned at a second vertical level above the first vertical level; and a power source configured to apply an electric field across the at least one electrode and the substrate stage, including across a thickness of the resist layer when the substrate is secured on the substrate stage.
Claims20
A lithography system, comprising:
- a substrate stage configured to secure a substrate at a first vertical level, wherein the substrate is deposited with a resist layer thereon;
- at least one electrode positioned at a second vertical level above the first vertical level;
- a power source configured to apply an electric field across the at least one electrode and the substrate stage, including across a thickness of the resist layer when the substrate is secured on the substrate stage;
- and
- a projection optics module including a plurality of optic components, wherein one of the at least one electrode is positioned above at least one of the plurality of optic components.
An apparatus for applying a bias across a thickness of a substrate during a lithography operation using an extreme ultraviolet (EUV) radiation source, the apparatus comprising:
- a substrate stage configured to secure a substrate thereon;
- an upper electrode positioned over the substrate stage;
- a lower electrode positioned below the substrate stage;
- and
- a power source configured to apply an electric field between the upper electrode and the lower electrode and across the substrate stage, including across a thickness of the substrate when the substrate is secured on the substrate stage.
A method for performing lithography, comprising:
- securing a substrate on a substrate stage, the substrate being coated with a resist layer thereon;
- irradiating an EUV radiation on the resist layer;
- and
- contemporaneously with the irradiating of the EUV radiation, applying, by use of a power source, an electric field across a thickness of the resist layer,
- wherein the applying of the electric field across the thickness of the resist layer includes applying the electric field between an upper electrode positioned over the substrate secured on the substrate stage and a lower electrode positioned below the substrate stage.
Dependencies are inferred from the claim text.