EUV lithography system and method with optimized throughput and stability

A lithography method comprising:

• exposing a first resist layer disposed over a first wafer to radiation, wherein the radiation is generated by using a laser beam to excite first dose droplets and first margin droplets, wherein the first margin droplets are reserved for dose control when an energy of the radiation generated from the first dose droplets cannot reach a first target energy for meeting a first exposure dosage for the first resist layer;
• exposing a second resist layer disposed over a second wafer to radiation, wherein the radiation is generated by using the laser beam to excite second dose droplets and second margin droplets, wherein the second margin droplets are reserved for dose control when an energy of the radiation generated from the dose droplets cannot reach a second target energy for meeting a second exposure dosage for the second resist layer, wherein the second exposure dosage is different than the first exposure dosage;
• and
• wherein a first wafer scan speed during the exposing of the first resist layer depends on the first exposure dosage, a second wafer scan speed during the exposing of the second resist layer depends on the second exposure dosage, a number of the first margin droplets is based on the first wafer scan speed, and a number of the second margin droplets is based on the second wafer scan speed.