Method for manufacturing an array substrate motherboard

A method for manufacturing an array substrate motherboard, comprising:

• forming a film layer pattern for a first display product at a first region of a base substrate, the first display product having deep holes at a first density;
• and
• forming a film layer pattern for a second display product at a second region of the base substrate, the second display product having deep holes at a second density smaller than the first density,
• wherein each deep hole is a via-hole penetrating at least two insulation layers,
• the step of forming the film layer pattern for the first display product at the first region of the base substrate and the film layer pattern for the second display product at the second region of the base substrate comprises:
• forming a first conductive pattern on the base substrate;
• forming an insulation layer covering the first conductive pattern, forming the via-holes at the first density in a portion of the insulation layer at the first region, and forming the via-holes at the second density in a portion of the insulation layer at the second region;
• reducing a thickness of the portion of the insulation layer at the first region, so that the via-hole at the first region has a depth smaller than the via-hole at the second region;
• and
• forming a second conductive pattern on the insulation layer, so that a portion of the second conductive pattern at the first region is connected to a portion of the first conductive pattern at the first region through the via-hole at the first region, and a portion of the second conductive pattern at the second region is connected to a portion of the first conductive pattern at the second region through the via-hole at the second region.

A method for manufacturing an array substrate motherboard, comprising:

• forming a film layer pattern for a first display product at a first region of a base substrate and forming a film layer pattern for a second display product at a second region of the base substrate, wherein
• the first display product has deep holes at a density larger than that of the second display product, and each deep hole is a via-hole penetrating through at least two insulation layers,
• the step of forming the film layer pattern for the first display product at the first region of the base substrate and forming the film layer pattern for the second display product at the second region of the base substrate comprises:
• prior to forming a second conductive pattern on an insulation layer, reducing a thickness of the insulation layer at the first region;
• and
• forming the second conductive pattern on the insulation layer, and enabling the second conductive pattern to be connected to a first conductive pattern under the insulation layer through a via-hole structure penetrating through the insulation layer;
• wherein the step of forming the film layer pattern for the first display product at the first region of the base substrate and forming the film layer pattern for the second display product at the second region of the base substrate comprises:
• forming the first conductive pattern;
• forming the insulation layer covering the first conductive pattern and forming the via-hole structure penetrating through the insulation layer;
• reducing the thickness of the insulation layer at the first region;
• and
• forming the second conductive pattern on the insulation layer;
• wherein the step of forming the insulation layer covering the first conductive pattern and forming the via-hole structure penetrating through the insulation layer, reducing the thickness of the insulation layer at the first region and forming the second conductive pattern on the insulation layer comprises:
• forming the insulation layer on the base substrate with the first conductive pattern;
• applying a negative photoresist onto the insulation layer, and exposing the negative photoresist using a grey-tone mask plate comprising a nontransparent pattern corresponding to a region where the via-hole structure is to be formed, a partially-transparent pattern corresponding to the first region other than the region where the via-hole structure is to be formed, and a fully-transparent pattern corresponding to the second region other than the region where the via-hole structure is to be formed;
• developing the negative photoresist to form a photoresist partially-reserved region, a photoresist unreserved region and a photoresist fully-reserved region;
• etching off the insulation layer at the photoresist unreserved region, to form the via-hole structure penetrating through the insulation layer;
• and removing the negative photoresist at the photoresist partially-reserved region, and etching the insulation layer at the photoresist partially-reserved region, to reduce the thickness of the insulation layer at the photoresist partially-reserved region.