Thin film transistor, method for manufacturing the same, array substrate and display device

An array substrate, comprising a substrate and a plurality of thin film transistors arranged on the substrate, wherein,

• each of the plurality of thin film transistors comprises a gate, a gate insulating layer, an active layer, a source electrode and a drain electrode;
• the drain electrode comprises a first sub-drain electrode and at least one second sub-drain electrode are physically detached from one another, and a first portion of the active layer between the first sub-drain electrode and the source electrode, and a second portion of the active layer between each of the at least one second sub-drain electrode and the source electrode are used for forming different portions of a primary channel, respectively;
• and
• the first sub-drain electrode is a signal input electrode, and a third portion of the active layer between the first sub-drain electrode and each of the at least one second sub-drain electrode is used for forming an auxiliary channel, a channel length of the auxiliary channel being less than or equal to a channel length of the primary channel.

A display device, comprising a backlight module and an array substrate arranged on the backlight module, wherein,

• the array substrate comprises a substrate and a plurality of thin film transistors arranged on the substrate;
• each of the plurality of thin film transistors comprises a gate, a gate insulating layer, an active layer, a source electrode and a drain electrode;
• the drain electrode comprises a first sub-drain electrode and at least one second sub-drain electrode that are physically detached from one another, and a first portion of the active layer between the first sub-drain electrode and the source electrode, and a second portion of the active layer between each of the at least one second sub-drain electrode and the source electrode are used for forming different portions of a primary channel, respectively;
• and
• the first sub-drain electrode is a signal input electrode, and a third portion of the active layer between the first sub-drain electrode and each of the at least one second sub-drain electrode is used for forming an auxiliary channel, a channel length of the auxiliary channel being less than or equal to a channel length of the primary channel.