US 10,504,927 B2 · Thin film transistor array panel

Abstract

A semiconductor device comprises a multi-layered structure disposed over a substrate (101) and defining a composite lateral etch profile. The multi-layered structure includes a lower sub-layer (105-1) disposed over the substrate (101) and comprising a metal oxide material that includes indium and zinc, the indium and zinc content in the lower sub-layer (105-1) substantially defining a first indium to zinc content ratio; a middle sub-layer (105-2) disposed over the lower sub-layer (105-1) and comprising a metal material; an upper sub-layer (105-3) disposed over the middle sub-layer (105-2) and comprising a metal oxide material that includes indium and zinc, the indium to zinc content in the upper sub-layer (105-3) substantially defining a second indium to zinc content ratio smaller than the first indium to zinc content ratio; and a lateral byproduct layer formed over the lateral etched surface, comprising substantially an metal oxide of the metal material in the middle sub-layer (105-2).

Claims18

Dependent claims

A thin film transistor array panel, comprising:

a substrate;
a first conductive layer on the substrate and comprising a gate electrode;
a channel layer on the gate electrode and insulated there-from;
and
a second conductive layer on the channel layer, the second conductive layer comprising a multi-layered portion defining a source electrode and a drain electrode, wherein the multi-layered portion of the second conductive layer comprises:
a first sub-layer on the channel layer and in electrical contact with the channel layer,
a second sub-layer on the first sub-layer, the second sub-layer comprising metal, and
a third sub-layer on the second sub-layer,
wherein a gap is in the second conductive layer and between the source electrode and the drain electrode;
the gap extends through the first sub-layer, the second sub-layer, and the third sub-layer;
wherein a lateral byproduct layer is formed on both a side surface of the source electrode adjacent to the gap and a side surface of the drain electrode adjacent to the gap;
the lateral byproduct layer comprises an metal oxide of the metal in the second sub-layer.

9 more elements

Dependencies are inferred from the claim text.

Thin film transistor array panel

Life of this patent

Thin film transistor array panel

Life of this patent

Abstract

Claims18