Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHideki Matsukura
Life of this patent
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Abstract
An area occupied by a circuit element having at least a capacitor and a transistor is reduced in a semiconductor device. In a semiconductor device including a first transistor, a second transistor, and a capacitor, the first transistor and the capacitor are provided over the second transistor. Then, a common electrode, which serves as one of a source and a drain of the first transistor and one electrode of the capacitor, is provided. In addition, the other electrode of the capacitor is provided over the common electrode.
Claims13
A semiconductor device comprising:
- a first transistor comprising a semiconductor layer, a gate, a first electrode, and an insulating layer between the semiconductor layer and the gate;
- a second transistor;
- and
- a capacitor comprising the first electrode, a second electrode, and the insulating layer between the first electrode and the second electrode,
- wherein the first electrode is a common electrode serving as one of a source and a drain of the first transistor and the first electrode of the capacitor,
- wherein the common electrode is electrically connected to a gate of the second transistor through an opening provided in the semiconductor layer of the first transistor,
- wherein the common electrode and the second transistor partly overlap with each other, and
- wherein the second electrode is over the common electrode.
A semiconductor device comprising:
- a first transistor comprising a semiconductor layer, a gate, a first electrode, and an insulating layer between the semiconductor layer and the gate;
- a second transistor;
- and
- a capacitor comprising the first electrode, a second electrode, and the insulating layer between the first electrode and the second electrode,
- wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,
- wherein the first electrode and the second transistor partly overlap with each other,
- wherein the one of the source and the drain of the first transistor serves as the first electrode of the capacitor,
- wherein the second electrode is over the first electrode,
- wherein the gate of the first transistor is electrically connected to the one of the source and the drain of the first transistor using a wiring provided over the second electrode, and
- wherein the wiring is electrically connected to the one of the source and the drain of the first transistor through an opening provided in the second electrode.
A semiconductor device comprising:
- a transistor comprising a common electrode, a gate, and a semiconductor layer;
- a capacitor comprising the common electrode and an electrode over the common electrode;
- and
- a wiring over the electrode,
- wherein the gate of the transistor is electrically connected to the wiring,
- wherein the wiring is electrically connected to the common electrode through an opening provided in the electrode, and
- wherein the opening overlaps with the semiconductor layer.
Dependencies are inferred from the claim text.