Integrated circuit structure and manufacturing method thereof

An integrated circuit structure, comprising:

• a substrate;
• a stacked structure, disposed on the substrate and comprising first dielectric layers and conductive layers alternately stacked, wherein the stacked structure has openings passing through the conductive layers;
• first contacts, located in the openings, wherein bottoms of the first contacts are located at different heights, the first contacts and the conductive layers are electrically connected in a one-to-one manner, the first contacts and the conductive layers which are not electrically connected to each other are isolated from each other, and the first contacts are not electrically connected to an uppermost layer in the conductive layers;
• second dielectric layers, disposed in the openings, wherein the first contacts are located on the second dielectric layers;
• third dielectric layers, disposed in the openings and located between the conductive layers and the first contacts, wherein bottoms of the third dielectric layers are located at different heights;
• and
• second contacts, electrically connected to the uppermost layer in the conductive layers and the first contacts respectively.