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US 10,504,906 B2Granted
FinFET SRAM layout and method of making the same
AssigneeGlobalfoundries Inc.
InventorsMing-Cheng Chang, Nigel Chan, Ralf Van Bentum
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Abstract
A method of forming a finFET SRAM and related device, are provided. Embodiments include forming a plurality of silicon fins in a substrate; and forming a gate over each of the fins, wherein all of the fins are diagonally skewed in a single direction relative to the gates, and all of the gates extend in a single direction relative to the respective fins.
Claims18
A method comprising:
- forming a plurality of silicon fins in a substrate;
- forming a gate over each of the fins;
- and
- forming source/drain (S/D) contacts in a diagonally skewed direction relative to the gates;
- and
- wherein all of the fins are diagonally skewed in a single direction relative to the gates, and
- wherein all of the gates extend in a single direction relative to the respective fins.
4 more elements
A device comprising:
- a plurality of silicon fins formed in a substrate;
- and
- a gate formed over each of the fins,
- wherein all of the fins are diagonally skewed in a single direction relative to the gates, and
- wherein all of the gates extend in a single direction relative to the respective fins, and
- wherein the finFET memory device comprises static random-access memory (SRAM) cell.
3 more elements
A method comprising:
- forming a plurality of silicon fins in a substrate;
- and
- forming a gate over each of the fins,
- wherein all of the fins are diagonally skewed in a single direction at an angle relative to the gates,
- wherein all of the gates extend in a single direction relative to the respective fins, and
- the fins and gates comprise a six transistor finFET SRAM high density (HD) cell.
3 more elements
Dependencies are inferred from the claim text.