US 10,504,903 B1 · Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes a substrate, a semiconductor channel layer, a gate electrode, and a first memory structure. The semiconductor channel layer is disposed on the substrate. The gate electrode and the first memory structure are disposed on the semiconductor channel layer. The first memory structure includes a first bottom plate, a first top plate, and a first memory element layer. The first top plate is disposed on the first bottom plate. The first memory element layer is disposed between the first bottom plate and the first top plate. The first bottom plate contacts the semiconductor channel layer. Purposes of process simplification and/or memory density enhancement may be achieved by integrating a transistor with a memory structure.

Claims19

Dependent claims

A semiconductor device, comprising:

a substrate;
a semiconductor channel layer disposed on the substrate;
a gate electrode disposed on the semiconductor channel layer;
a first memory structure disposed on the semiconductor channel layer, wherein the first memory structure comprises:
a first bottom plate;
a first top plate disposed on the first bottom plate;
and
a first memory element layer disposed between the first bottom plate and the first top plate, wherein the first bottom plate contacts the semiconductor channel layer;
an interconnection structure disposed between the substrate and the semiconductor channel layer;
and
a metal oxide semiconductor (MOS) structure disposed between the substrate and the interconnection structure.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor device and manufacturing method thereof

Life of this patent

Semiconductor device and manufacturing method thereof

Life of this patent

Abstract

Claims19