Data storage devices and methods of manufacturing the same

A method of manufacturing a data storage device, the method comprising:

• providing a substrate including a first region and a second region;
• forming a first interlayer dielectric layer on the first region and the second region of the substrate;
• forming a data storage layer on the first interlayer dielectric layer;
• selectively forming a mask layer on a portion of the data storage layer that is formed on the second region;
• forming a top electrode layer on the data storage layer and the mask layer;
• patterning the top electrode layer to form a plurality of top electrodes on the first region;
• and
• patterning the data storage layer using the plurality of top electrodes as an etch mask to form a plurality of data storage parts on the first region,
• wherein, during patterning the data storage layer, an upper portion of the first interlayer dielectric layer is etched such that a first portion of the first interlayer dielectric layer that is formed on the first region has a top surface at a different level from that of a top surface of a second portion of the first interlayer dielectric layer that is formed on the second region.

A method of manufacturing a data storage device, the method comprising:

• forming a data storage layer extending on a first region and a second region of a substrate;
• forming a mask layer on a first portion of the data storage layer that is formed on the second region of the substrate;
• forming a top electrode layer on the data storage layer and the mask layer;
• forming a plurality of mask patterns on the top electrode layer on the first region of the substrate;
• forming a plurality of top electrodes on the first region by etching the top electrode layer using the plurality of mask patterns as an etch mask until a second portion of the data storage layer that is formed on the first region and the mask layer that is formed on the second region are exposed;
• and
• forming a plurality of data storage elements on the first region by etching the data storage layer using the plurality of top electrodes as an etch mask.