Integrated circuit comprising balanced cells at the active

An integrated circuit, comprising:

• a first pair including a first nMOS transistor and a first pMOS transistor aligned adjacently in a first direction, the first pMOS transistor being arranged in and on an active silicon zone, the first pMOS transistor including a source, a drain, and a channel region that is subjected to compressive stress designed to be formed in a direction going from the source to the drain, the channel region including a SiGe alloy, the first nMOS transistor and the first pMOS transistor having a same threshold voltage level in terms of absolute value;
• a second pair including a second nMOS transistor and a second pMOS transistor aligned adjacently in the first direction, the second pMOS transistor being arranged in and on an active silicon zone, the second pMOS transistor including a source, a drain, and a channel region that is subjected to compressive stress designed to be formed in said direction, the channel region including a SiGe alloy, the second nMOS transistor and the second pMOS transistor having a same threshold voltage level in terms of absolute value that is lower than the threshold voltage level of the first nMOS transistor and of the first pMOS transistor;
• and
• a third pair including a third nMOS transistor having a same construction as the first nMOS transistor and a third pMOS transistor having a same construction as the second pMOS transistor, the third nMOS transistor and the third pMOS transistor being aligned adjacently in the first direction, said third pMOS transistor being arranged in and on an active silicon zone, the channel region of the third pMOS transistor exhibiting a compressive stress in said direction that is lower than that of the channel region of the first pMOS transistor a gate of the third pMOS transistor being positioned at a distance from the border of its active zone in said direction that is smaller than a distance between a gate of the first pMOS transistor and the border of its active zone, the third pair aligned with the first pair in a second direction perpendicular to the first direction.