Back to results
US 10,504,895 B2Granted
FinFET isolation structure and method for fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng Chang, Chih-Han Lin
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate, a first semiconductor fin, a second semiconductor fin, an air gap and a dielectric cap layer. The first semiconductor fin is disposed on the semiconductor substrate, and the second semiconductor fin is disposed on the semiconductor substrate. The air gap is located between the first semiconductor fin and the second semiconductor fin, and the dielectric cap layer caps a top of the air gap.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a first semiconductor fin on the semiconductor substrate;
- a second semiconductor fin on the semiconductor substrate;
- an air gap between the first semiconductor fin and the second semiconductor fin;
- a dielectric cap layer capping a top of the air gap;
- and
- two dummy gate spacers respectively on the first semiconductor fin and the second semiconductor fin, and sandwiching the dielectric cap layer.
4 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a stop layer on the semiconductor substrate;
- a first semiconductor fin on the stop layer;
- a second semiconductor fin on the stop layer;
- a first dummy gate spacer overlying the first semiconductor fin;
- a second dummy gate spacer overlying the second semiconductor fin;
- and a dielectric cap layer between the first dummy gate spacer and the second dummy gate spacer, wherein a bottom of the dielectric cap layer is separated from the stop layer.
4 more elements
A method for forming a semiconductor device, the method comprising:
- forming a dummy gate at least on a top of a semiconductor fin;
- forming at least one dummy gate spacer on at least one sidewall of the dummy gate;
- etching the dummy gate and the semiconductor fin to form an air gap dividing the semiconductor fin into first and second portions;
- and
- forming a dielectric cap layer into the air gap to cap a top of the air gap.
2 more elements
Dependencies are inferred from the claim text.