Semiconductor device

A semiconductor device, comprising:

• a first transistor including:
• a first source region;
• and
• a first gate;
• and
• a second transistor including:
• a second source region electrically connected with the first source region and the first gate,
• a second drain region in combination with the second source region defining a body diode therebetween,
• wherein a threshold voltage of the body diode is greater than that of the first transistor.

A method, comprising:

• providing a substrate;
• defining a well in the substrate;
• forming an insulating layer with a uniform thickness on the substrate;
• defining a first bulk region in a first portion of the well;
• defining a second bulk region in a second portion of the well, wherein dopant concentration of the second bulk region is greater than the first bulk region;
• defining a first source region and a second source region in the first bulk region and the second bulk region, respectively;
• forming the first gate over the well;
• and
• connecting the first source region, the first gate and the second source region together.