High density nanosheet diodes

A semiconductor structure, comprising:

• a substrate having a field-effect transistor region and a diode region;
• a first stack comprising layers of a first material at the field-effect transistor region;
• a second stack comprising the layers of the first material alternating with layers of a second material at the diode region, the second material having a first dopant at the diode region, wherein the second material having the first dopant wraps around each of the layers of the first material at the diode region and the second material is directly below a bottommost layer of the layers of the first material at the diode region, wherein the first material at the diode region has a second dopant;
• a third material having a third dopant at opposing sidewalls of the second stack, wherein a conductivity type of the first material having the second dopant is the same as a conductivity type of the third material having the third dopant, wherein a conductivity type of the second material having the first dopant is opposite to the conductivity type of the first material having the second dopant and the conductivity type of the third material having the third dopant;
• and
• a metalizing contact material over the substrate, wherein both the field-effect transistor region and the diode region include terminals.