Light-emitting component and method for producing a light-emitting component

A method for producing a component, comprising the following method steps:

• preparing a plurality of semiconductor units, each comprising a plurality of monolithically produced image points each having an active layer which emits light during operation, wherein each semiconductor unit is applied on a growth substrate in each case;
• preparing a connection substrate having a mounting surface and electrical contact structures,
• applying the semiconductor units on the mounting surface in such a way that the semiconductor units are arranged on the mounting surface at a distance from one another laterally, wherein
• a distance (d) between adjacent semiconductor units is at least 5 μm and no more than 55 μm and
• the image points are separately electrically controllable, wherein
• each image point is electrically connected to at least one semiconductor contact,
• each image point is associated with a respective electrical contact structure, and
• the electrical contact structure associated with an image point can be electrically connected to the semiconductor contact of the respective image point;
• and
• at least partly detaching the growth substrate.

A component comprising at least one optoelectronic semiconductor chip having

• a connection substrate comprising a mounting surface and electrical contact structures and
• a plurality of structured semiconductor units, each comprising a plurality of monolithically integrated image points each having an active layer which emits light during operation, wherein
• the semiconductor units are arranged on the mounting surface at a distance from one another laterally,
• the image points are separately electrically controllable, wherein
• each image point is electrically connected to at least one semiconductor contact,
• each image point is associated with a respective electrical contact structure;
• and
• the electrical contact structure associated with an image point can be electrically connected to the semiconductor contact of the respective image point,
• between the active layers of adjacent image points, a separation trench having a width (B) of at least 5 μm and no more than 25 μm is arranged in each case, and
• the distance between adjacent semiconductor units deviates by no more than +/−10% from an average width of the separation trenches.