3DIC structure with protective structure and method of fabricating the same and package
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsien-Wei Chen, Ching-Jung Yang, Ming-Fa Chen
Life of this patent
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Abstract
Provided is a three-dimensional integrated circuit (3DIC) structure including a die stack structure, a metal circuit structure, and a protective structure. The die stack structure includes a first die and a second die face-to-face bonded together. The metal circuit structure is disposed over a back side of the second die. The protective structure is disposed within the back side of the second die and separates one of a plurality of through-substrate vias (TSVs) of the second die from the metal circuit structure.
Claims20
A three-dimensional integrated circuit (3DIC) structure, comprising:
- a die stack structure comprising a first die having a front side and a back side and a second die having a front side and a back side, the front side of the first die bonded to the front side of the second die, the second die including a plurality of through-substrate vias (TSVs);
- a metal circuit structure disposed over the back side of the second die;
- and
- a first protective structure disposed within the back side of the second die and separating and electrically isolating one of the plurality of TSVs of the second die from the metal circuit structure.
A method of manufacturing a 3DIC structure, comprising:
- forming a die stack structure comprising a first die and a second die face-to-face bonded together;
- performing a first planarization process to expose a plurality of through-substrate vias (TSVs) of the second die at a back side of the second die, wherein the back side of the second die has a first recess that extends into one of the plurality of TSVs of the second die;
- filling a protective structure in the first recess with a conformal layer;
- and
- forming a metal circuit structure over the back side of the second die to electrically connected to the die stack structure through another of the plurality of TSVs, wherein the protective structure electrically isolates the one of the plurality of TSVs of the second die from the metal circuit structure.
A package, comprising:
- a 3DIC structure comprising a die stack structure, a metal circuit structure, and a protective structure between the die stack structure and the metal circuit structure, wherein the metal circuit structure is electrically connected to the die stack structure through one of a plurality of through-substrate vias (TSVs) of the die stack structure, and the protective structure separates and electrically isolates another of the plurality of TSVs of the die stack structure from the metal circuit structure;
- an insulating encapsulation, laterally encapsulating the 3DIC structure;
- a redistribution layer (RDL) structure, disposed over the 3DIC structure and the insulating encapsulation;
- and
- a plurality of connectors, disposed over and electrically connected to the 3DIC structure through the RDL structure.
Dependencies are inferred from the claim text.