Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device, the method comprising:

• forming a substrate structure comprising:
• a carrier comprising a top carrier side and a bottom carrier side;
• an adhesive layer comprising a bottom adhesive layer side on the top carrier side, and a top adhesive layer side;
• and
• a signal distribution structure (SDS) comprising a bottom SDS side adhered to the top adhesive layer side and a top SDS side, the signal distribution structure comprising a plurality of conductive layers, and at least one dielectric layer,
• wherein said forming comprises:
• receiving a first initial carrier and the SDS, wherein the bottom SDS side is coupled to a top side of the first initial carrier;
• coupling a bottom side of a second initial carrier to the top SDS side, wherein the second initial carrier comprises an aperture that exposes at least a portion of the top SDS side;
• removing the first initial carrier from the bottom SDS side;
• testing the SDS, at least in part, through the aperture in the second initial carrier;
• and
• attaching the carrier to the bottom SDS side.

A method of manufacturing a semiconductor device, the method comprising:

• forming a substrate structure comprising:
• a carrier comprising a top carrier side and a bottom carrier side;
• an adhesive layer comprising a bottom adhesive layer side on the top carrier side, and a top adhesive layer side;
• and
• a signal distribution structure (SDS) comprising a bottom SDS side adhered to the top adhesive layer side and a top SDS side, the signal distribution structure comprising a plurality of conductive layers, and at least one dielectric layer,
• wherein said forming comprises:
• coupling a bottom side of a test carrier to the top SDS side, wherein the test carrier comprises an aperture that exposes at least a portion of the top SDS side;
• testing the SDS, at least in part, through the aperture in the test carrier;
• and
• attaching the carrier to the bottom SDS side.