Semiconductor device

A semiconductor device comprising:

• a die pad having a first surface and a second surface opposite to the first surface;
• a first lead spaced apart from the die pad;
• a semiconductor chip having a power transistor, and mounted over the first surface of the die pad via a die bonding material;
• a first wire electrically connecting a first electrode of the semiconductor chip with the first lead;
• and
• a resin sealing body sealing the semiconductor chip, an inner portion of the first lead and the first wire such that an outer portion of the first lead is exposed,
• wherein the first lead has a third surface that is on the same side as the first surface of the die pad, and a fourth surface opposite to the third surface,
• wherein the third surface in the inner portion of the first lead and the fourth surface in the inner portion of the first lead are covered with the resin sealing body,
• wherein the first wire is bonded to the third surface of a wire bonding portion of the inner portion of the first lead, and
• wherein a metal film is formed on each of the fourth surface in the inner portion of the first lead, the third surface in the outer portion of the first lead, and the fourth surface in the outer portion of the first lead, without forming the metal film on an entirety of the third surface in the inner portion of the first lead.