Semiconductor device with over pad metal electrode and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising the steps of:

• (a) forming a pad electrode in an uppermost wiring layer of a multilayer wiring layer over a semiconductor substrate;
• (b) forming a surface protective film covering the pad electrode;
• (c) making an opening in the surface protective film in a manner to expose the pad electrode partially;
• and
• (d) forming a conductive layer over the pad electrode exposed at a bottom of the opening,
• wherein thickness of the conductive layer formed over the pad electrode is smaller than thickness of the surface protective film formed over the pad electrode, and
• wherein the conductive layer is formed by an electroless plating method.

A method for manufacturing semiconductor device, comprising the steps of:

• (a) forming a pad electrode including a first barrier metal film, a first conductive film formed over the first barrier metal film, and a second barrier metal firm formed over the first conductive film, in an uppermost wiring layer of a multilayer wiring layer over a semiconductor substrate;
• (b) forming a first insulating film over the second barrier metal film in a manner to cover the pad electrode;
• (c) forming a first resist pattern over the first insulating film;
• (d) selectively removing the first insulating film and the second barrier metal film by etching using the first resist pattern as a mask, so as to expose the first conductive film partially;
• (e) after the step (d), removing the first resist pattern;
• (f) after the step (e), forming a second insulating film in a manner to cover the first insulating film, side surfaces of the second barrier metal film, and the first conductive film;
• (g) forming a second resist pattern over the second insulating film;
• (h) selectively removing the second insulating film by etching using the second resist pattern as a mask, so as to expose the first conductive film partially and make the second insulating film remain over an upper surface and side surfaces of the first insulating film, over side surfaces of the second barrier metal film, and over the first conductive film;
• (i) after the step (h), removing the second resist pattern;
• and
• (j) after the step (i), forming a conductive layer over the exposed first conductive film,
• wherein thickness of the conductive layer formed over the first conductive film is smaller than a sum of thicknesses of the first insulating film and the second insulating film which are formed over the second barrier metal film.