Package structure and method of fabricating the same

A method of fabricating a package structure, comprising:

• providing a semiconductor die, the semiconductor die has an active surface and a backside surface opposite to the active surface;
• forming a warpage control layer on the backside surface of the semiconductor die by plasma-enhanced chemical vapor deposition, wherein the plasma enhanced chemical vapor deposition is performed at temperatures below 200° C.;
• bonding the semiconductor die and the warpage control layer onto a carrier;
• forming a plurality of through insulator vias on the carrier to surround the semiconductor die and the warpage control layer;
• forming an insulating encapsulant on the carrier to encapsulate the semiconductor die, the warpage control layer and the plurality of through insulator vias, wherein the insulating encapsulant has a first surface and a second surface opposite to the first surface;
• forming a redistribution layer on the first surface of the insulating encapsulant, wherein the redistribution layer is electrically connected to the semiconductor die;
• de-bonding the carrier;
• and
• forming a plurality of conductive balls on the second surface of the insulating encapsulant.

A method of fabricating a package structure, comprising:

• providing a semiconductor die having a warpage control layer formed thereon, wherein the semiconductor die comprises a semiconductor substrate located at a backside of the semiconductor die, and a plurality of conductive posts located at an active surface opposite to the backside of the semiconductor die, and the warpage control layer is attached to the backside of the semiconductor die on the semiconductor substrate, and formed with a material having a Young's Modulus of 100 GPa or more;
• bonding the semiconductor die onto a carrier through the warpage control layer;
• and
• forming a plurality of through insulator vias on the carrier, wherein the plurality of through insulator vias is surrounding the semiconductor die;
• forming an insulating encapsulant on the carrier after forming the plurality of through insulator vias to encapsulate the semiconductor die, the warpage control layer and the plurality of through insulator vias.