Semiconductor package structure for improving die warpage and manufacturing method thereof

A method of manufacturing a semiconductor die package, the method comprising:

• providing a substrate having a first surface;
• providing a semiconductor die having a first face, a second face opposite the first face, and a die edge face joining the first face to the second face;
• bonding and electrically interconnecting the second face of the semiconductor die to the first surface of the substrate using a plurality of conductive elements;
• providing a film having a first surface, a second surface opposite the first surface of the film, and a film edge surface joining the first surface of the film to the second surface of the film, the first surface of the film bonded to and covering the first face of the semiconductor die;
• providing one or more interconnects on the first surface of the substrate, wherein each of the one or more interconnects are symmetric about a plane:
• that is substantially parallel to the first surface of the substrate;
• and
• that intersects at substantially a midpoint of each of the one or more interconnects;
• and
• after providing the one or more interconnects, providing a mold compound directly contacting the first surface of the substrate, the film edge surface and the die edge face and exposing an upper surface of the one or more interconnects,
• wherein a top surface of the mold compound is coplanar with the second surface of the film, and
• wherein the mold compound encompasses the one or more interconnects such that at least a portion of a top surface of the one or more interconnects does not extend above the top surface of the mold compound.

A method of manufacturing a semiconductor die package, the method comprising:

• providing a semiconductor die having a first face, a second face opposite the first face, and a die edge face joining the first face to the second face;
• providing a film having a first surface covering the first face of the semiconductor die, a second surface opposite the first surface, and a film edge surface joining the first surface to the second surface;
• providing a substrate having a top surface onto which the semiconductor die is bonded using a plurality of conductive elements on the second face of the semiconductor die that electrically interconnect circuitry of the semiconductor die and the substrate;
• providing one or more interconnects on the top surface of the substrate, wherein each of the one or more interconnects are symmetric about a plane:
• that is substantially parallel to the top surface of the substrate;
• and
• that intersects at substantially a midpoint of each of the one or more interconnects;
• and
• providing a mold compound directly contacting and covering the film edge surface and exposing the second surface of the film opposite the first surface of the film, the mold compound exposing an upper surface of the one or more interconnects,
• wherein a top surface of the mold compound is coplanar with the second surface of the film, and
• wherein the mold compound encompasses the one or more interconnects such that at least a portion of a top surface of the one or more interconnects does not extend beyond the top surface of the mold compound.