Scheme for connector site spacing and resulting structures

A semiconductor device comprising:

• a first contact pad, the first contact pad having a first shape;
• a first passivation layer at least partially overlying the first contact pad;
• a first opening through the first passivation layer, the first opening having a second shape different from the first shape, the second shape of the first opening staying within the bounds of the first shape of the first contact pad in a top down view;
• a second passivation layer at least partially overlying the first contact pad;
• a second opening through the second passivation layer, the second opening having the second shape, the second shape of the second opening staying within the bounds of the first shape of the first contact pad in the top down view;
• and
• an underbump metallization extending through the first opening and the second opening to make contact with the first contact pad, the underbump metallization having the second shape, the second shape of the underbump metallization having a first portion and a second portion, the first portion and the second portion having different widths, the first portion being located within the bounds of the first shape of the first contact pad in the top down view, the second portion extending outside of the bounds of the first shape of the first contact pad in the top down view.

A semiconductor device comprising:

• a first contact pad over a substrate, the first contact pad having a first perimeter, the first perimeter having a first width measured along a first line and the first width measured along a second line, the first line and the second line each extending through a center of the first perimeter, the first line being perpendicular to the second line in a top down view;
• a first underbump metallization extending through a passivation layer to be in physical contact with the first contact pad, the first underbump metallization having a second perimeter, the second perimeter having a second width measured along a third line and a third width measured along a fourth line, the third line and the fourth line each extending through a center of the second perimeter, the third line being perpendicular to the fourth line in the top down view, the second width being greater than the first width, the third width being less than the first width;
• a first external contact in connection with the first underbump metallization;
• a reflowable material in physical contact with the first external contact;
• and
• a second external contact in physical contact with the reflowable material on an opposite side of the reflowable material from the first external contact.