Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate;
• a first wiring layer formed over the semiconductor substrate and extending in a first direction from a top view, the first wiring layer having a first width in a second direction perpendicular to the first direction;
• an interlayer insulating film formed between the first wiring layer and the semiconductor substrate;
• a plurality of first dummy patterns, the first dummy patterns being arranged repeatedly in a third direction, wherein the third direction is different from the second direction, the first dummy patterns having a same level as that of the first wiring layer, and each of the plurality of the first dummy patterns having a second length and a second width, wherein the second length is equal to or bigger than the second width;
• and
• a second dummy pattern placed between the first wiring layer and the plurality of first dummy patterns, each of the first dummy pattern at least partially overlaps with the second dummy pattern in the second direction, the second dummy pattern having a same level as that of the first wiring layer, the second dummy pattern extending in the fifth direction and having a third length in the fifth direction longer than the second length, the second dummy pattern having a third width in a sixth direction perpendicular to the fifth direction smaller than the second width, the third length is bigger than the third width, wherein there is no other dummy pattern disposed between the first wiring layer and the second dummy pattern in the second direction and, there is no other dummy pattern disposed between the first dummy patterns and the second dummy pattern in the second direction.