Method for building up a fan-out RDL structure with fine pitch line-width and line-spacing

A semiconductor device, comprising:

• a semiconductor die;
• a first insulating layer formed over an active surface of the semiconductor die including a first opening through the first insulating layer elongated in a first direction parallel to the active surface of the semiconductor die, wherein the first opening includes a length of the first opening in the first direction that is greater than a width of the first opening in a second direction perpendicular to the first direction and parallel to the active surface of the semiconductor die;
• a second insulating layer formed over the active surface of the semiconductor die including a second opening through the second insulating layer and elongated in the second direction, wherein a length of the second opening in the second direction is greater than the width of the first opening in the second direction, and wherein a width of the second opening in the first direction is less than the length of the first opening in the first direction;
• an encapsulant deposited over the semiconductor die;
• a build-up interconnect structure formed over the encapsulant and the active surface of the semiconductor die, wherein the build-up interconnect structure includes a third insulating layer extending into the first opening and second opening with a third opening formed in the third insulating layer;
• and
• a backside insulating layer formed over the encapsulant opposite the active surface of the semiconductor die, wherein the encapsulant extends between the backside insulating layer and encapsulant.

A semiconductor device, comprising:

• a semiconductor die;
• a first insulating layer formed over an active surface of the semiconductor die including a first opening formed through the first insulating layer and elongated in a first direction parallel to the active surface of the semiconductor die, wherein a length of the first opening in the first direction is greater than a width of the first opening in a second direction perpendicular to the first direction, and wherein the second direction is parallel to the active surface of the semiconductor die;
• a second insulating layer formed over the active surface of the semiconductor die including a second opening formed through the second insulating layer and elongated in the second direction, wherein a width of the second opening in the first direction is less than the length of the first opening in the first direction;
• and
• a conductive layer formed over the first insulating layer and second insulating layer, wherein a contact pad of the conductive layer is formed directly over the first opening and second opening and the contact pad is elongated in the first direction.

A semiconductor device, comprising:

• a semiconductor die;
• a first insulating layer formed over an active surface of the semiconductor die including a first opening through the first insulating layer and elongated in a first direction parallel to the active surface of the semiconductor die, wherein a length of the first opening in the first direction is greater than a width of the first opening in a second direction parallel to the active surface of the semiconductor die, and the second direction is perpendicular to the first direction;
• and
• a second insulating layer formed over the active surface of the semiconductor die including a second opening formed through the second insulating layer and elongated in the second direction, wherein a length of the second opening in the second direction is greater than a width of the second opening in the first direction, and wherein the width of the second opening in the first direction is less than the length of the first opening in the first direction;
• and
• a conductive layer in contact with the semiconductor die through the first opening and second opening, wherein the conductive layer extends through the first opening and second opening without contacting the first insulating layer or second insulating layer.