Semiconductor device including superconducting metal through-silicon-vias
AssigneeInternational Business Machines Corporation
InventorsDavid W. Abraham, John M. Cotte
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Abstract
A semiconductor structure and methods of forming the semiconductor structure generally includes providing a thermocompression bonded superconducting metal layer sandwiched between a first silicon substrate and a second silicon substrate. The second substrate includes a plurality of through silicon vias to the thermocompression bonded superconducting metal layer. A second superconducting metal is electroplated into the through silicon vias using the thermocompression bonded superconducting metal layer as a bottom electrode during the electroplating process, wherein the filling is from the bottom upwards.
Claims12
A semiconductor structure comprising:
- a thermocompression bonded superconducting metal layer sandwiched between a first silicon substrate and a second silicon substrate, wherein the first substrate includes a first portion of the superconducting metal layer, and the second substrate includes a second portion of the superconducting metal layer, wherein the second substrate comprises a plurality of through-silicon-vias to the thermocompression bonded superconducting metal layer, and wherein the superconducting metal layer surrounds each one of t through-silicon vias and is at a bottom surface of through-silicon vias to form a recess therein;
- and
- an electroplated superconducting metal filling the plurality of through-silicon-vias.
A semiconductor structure comprising:
- a thermocompression bonded superconducting metal layer sandwiched between a first silicon substrate and a second silicon substrate, wherein the second substrate comprises a plurality of through-silicon-vias to the thermocompression bonded superconducting metal layer, wherein the superconducting metal layer surrounds each one of the through-silicon vias and is at in bottom surface of the through-silicon to form a recess in the thermocompression superconducting metal layer.
Dependencies are inferred from the claim text.