Contact structure and the method of forming the same

A method for forming a semiconductor contact structure, the method comprising:

• depositing a dielectric layer over a substrate;
• etching a contact region in the dielectric layer, the contact region having side portions and a bottom portion that exposes the substrate;
• depositing a dielectric barrier layer in the contact region to cover the side portions and the bottom portion, and etching the dielectric barrier layer to expose the substrate;
• applying a surface treatment in the contact region to nitridize the side and bottom portions of the contact region, wherein a portion of the dielectric layer and the dielectric barrier layer are exposed during the surface treatment;
• and
• depositing an adhesion layer in the contact region to cover the side portions and the bottom portion of the opening, including the dielectric barrier layer.

A method for forming a semiconductor device, the method comprising:

• etching a contact region in a dielectric layer, the dielectric layer being positioned over a substrate, the contact region having side portions and a bottom portion that exposes the substrate;
• depositing a dielectric barrier layer in the contact region to partially cover the side portions of the contact region;
• forming a silicide region located in the substrate beneath the bottom portion of the contact region having a conductive layer that is formed over the silicide region;
• performing a surface treatment on the side portions and the bottom portion of the contact region that forms a nitridation region adjacent the bottom portion of the contact region within the substrate and N-rich areas along the side portions of the contact region;
• and
• depositing an adhesion layer in the contact region to cover the side portions and the bottom portion of the contact region, including the silicide region in the substrate and the dielectric barrier layer.