Interconnection structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhi-Sheng Zheng, Chih-Lin Wang
Life of this patent
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Abstract
An interconnection structure includes a first dielectric layer, a first conductor, an etch stop layer, and a second dielectric layer. The first conductor is partially in the first dielectric layer and having a portion protruding from the first dielectric layer. The etch stop layer is on the first dielectric layer and covering the protruding portion of the first conductor. The second dielectric layer is on the etch stop layer. A bottom surface of the second dielectric layer has a portion in a position lower than a top of the first conductor.
Claims20
An interconnection structure, comprising:
- a first dielectric layer;
- a first conductor partially in the first dielectric layer and having a portion protruding from the first dielectric layer;
- an etch stop layer on the first dielectric layer and has a raised portion covering the protruding portion of the first conductor, wherein the raised portion has a cap part over a top surface of the protruding portion of the first conductor and a spacer part over a sidewall of the protruding portion of the first conductor and thicker than the cap part;
- and
- a second dielectric layer on the etch stop layer.
An interconnection structure, comprising:
- a first dielectric layer;
- a first conductor at least partially in the first dielectric layer;
- an etch stop layer on the first dielectric layer;
- a second dielectric layer on the etch stop layer, wherein an interface between the etch stop layer and the second dielectric layer has a first portion in a first position lower than a top of the first conductor and a second portion in a second position higher than the top of the first conductor;
- and
- a second conductor in the second dielectric layer and electrically connected to the first conductor, wherein the second conductor has an extending portion that extends through the first portion of the interface between the etch stop layer and the second dielectric layer and the extending portion of the second conductor is on opposite sidewalls of the first conductor.
A method for manufacturing an interconnection structure, the method comprising:
- etching a first hole in a first dielectric layer;
- depositing a first conductor in the first hole;
- etching back the first dielectric layer, such that the first conductor has a portion protruding from the first dielectric layer;
- conformally depositing an etch stop layer on the first dielectric layer and the protruding portion of the first conductor;
- depositing a second dielectric layer on the etch stop layer;
- etching a second hole in the second dielectric layer and the etch stop layer to expose the first conductor and to form a recess surrounding the first conductor;
- and
- depositing a barrier layer to line the recess.
Dependencies are inferred from the claim text.