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US 10,504,821 B2Granted
Through-silicon via structure
AssigneeUnited Microelectronics Corp.
InventorsChu-Fu Lin, Ming-Tse Lin, Kuei-Sheng Wu
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Abstract
A TSV structure includes a substrate comprising at least a TSV opening formed therein, a conductive layer disposed in the TSV opening, and a bi-layered liner disposed in between the substrate and the conductive layer. More important, the bi-layered liner includes a first liner and a second liner, and a Young's modulus of the first liner is different from a Young's modulus of the second liner.
Claims5
A through-silicon-via (TSV) structure comprising:
- a substrate comprising at least a TSV opening formed therein;
- a conductive layer disposed in the TSV opening;
- and
- a bi-layered liner formed in between the substrate and the conductive layer, the bi-layered liner comprising a first liner and a second liner, wherein the first liner is disposed in between the second liner and the substrate, and the second liner is disposed in between the first liner and the conductive layer, and the first liner is directly contacted with the second liner, and wherein the first liner and the second liner comprise a same material formed by different processes or treated by different processes, wherein a Young's modulus of the second liner is smaller than a Young's modulus of the first liner, and a thickness of the first liner is equal to a thickness of the second liner.
1 more element
Dependencies are inferred from the claim text.