Method for forming semiconductor device and resulting device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTong-Min Weng, Tsung-Han Wu
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Abstract
A method for forming a semiconductor device includes steps of: forming at least one gate structure comprising a gate electrode over a substrate, and forming a first dielectric layer of a first dielectric material along a side wall of the at least one gate structure. The first dielectric layer of the first dielectric material includes fluorine doped silicon oxycarbonitride with a doping concentration of fluorine. The dielectric constant of the first dielectric layer is adjusted through the doping concentration of fluorine.
Claims19
A method for forming a semiconductor device, comprising:
- forming at least one gate structure including a gate electrode over a substrate, the gate electrode including a first conductive material;
- and
- forming a first dielectric layer of a first dielectric material along a side wall of the at least one gate structure, the first dielectric layer of the first dielectric material comprising a fluorine doped silicon oxycarbonitride or silicon oxycarbide with a doping concentration of fluorine,
- wherein the forming the first dielectric layer comprises:
- forming a base layer comprising silicon ocycarbonitride or silicon oxycarbide along the side wall of the at least one gate structure;
- and
- doping the base layer through molecular ion implantation using a precursor composition comprising a fluorine-containing precursor, wherein the fluorine-containing precursor comprises hydrogen fluoride (HF).
A method for forming a semiconductor device, comprising:
- forming at least one gate structure comprising a gate electrode over a substrate, the gate electrode comprising a first conductive material;
- forming a first dielectric layer along a side wall of the at least one gate structure, the first dielectric layer comprising fluorine doped silicon oxycarbonitride with a doping concentration of fluorine;
- and
- forming a second dielectric layer comprising silicon nitride laterally over and in contact with the first dielectric layer,
- wherein the forming the first dielectric layer of a first dielectric material comprises:
- forming a base layer comprising silicon oxycarbonitride along the side wall of the at least one gate structure;
- and
- doping the base layer through molecular ion implantation using a precursor composition comprising hydrogen fluoride (HF).
A method for forming a semiconductor device, comprising:
- forming at least one gate structure comprising a gate electrode over a substrate, the gate electrode comprising a first conductive material;
- forming a first dielectric layer along a side wall of the at least one gate structure, the first dielectric layer comprising fluorine doped silicon oxycarbonitride with a doping concentration of fluorine;
- and
- forming a second dielectric layer comprising silicon nitride laterally over and in contact with the first dielectric layer,
- wherein the forming the first dielectric layer of a first dielectric material comprises:
- forming a base layer comprising silicon oxycarbonitride along the side wall of the at least one gate structure;
- and
- doping the base layer through molecular ion implantation using a precursor composition comprising a mixture containing molecular ions of HF+ and CO+.
Dependencies are inferred from the claim text.