Hybrid-channel nano-sheet FETs

A method of forming semiconductor devices:

• forming first layer caps at ends of layers of first material in stacks of alternating layers of first material and second material by oxidizing exposed portions of the first material;
• forming second layer caps at ends of the layers of second material;
• etching away the first layer caps in a first device region;
• etching away the second layer caps in a second device region;
• growing first source/drain regions in the first device region from exposed ends of the layers of the first material;
• and
• growing second source/drain regions in the second device region from exposed ends of the layers of the second material.

A method of forming semiconductor devices:

• forming first layer caps at ends of layers of first material in stacks of alternating layers of first material and second material;
• forming second layer caps at ends of the layers of second material by laterally etching the layers of the second material to form recesses and depositing a dielectric fill in the recesses;
• etching away the first layer caps in a first device region;
• etching away the second layer caps in a second device region;
• growing first source/drain regions in the first device region from exposed ends of the layers of the first material;
• and
• growing second source/drain regions in the second device region from exposed ends of the layers of the second material.