Methods of forming conductive spacers for gate contacts and the resulting device

A method, comprising:

• forming a plurality of gate structures above a semiconducting substrate;
• forming first sidewall spacers adjacent each of said plurality of gate structures;
• forming a first dielectric layer adjacent said first sidewall spacers;
• recessing said plurality of gate structures and said first sidewall spacers to define first gate contact cavities;
• forming second sidewall spacers in said first gate contact cavities;
• forming first conductive gate contacts in said first gate contact cavities;
• forming a mask layer above a first subset of said plurality of gate structures;
• removing said second sidewall spacers of a second subset of said plurality of gate structures not covered by said mask layer after forming said first conductive gate contact to expose an upper surface of said first sidewall spacers and to define first spacer cavities between said first dielectric layer and said first conductive gate contacts;
• and
• forming a conductive material in said first spacer cavities to form first conductive spacers contacting said first conductive gate contacts and said upper surfaces of said first sidewall spacers for said second subset of said plurality of gate structures, wherein said first sidewall spacers cover entire sidewalls of said first gate structures after said conductive material is formed.

A device, comprising:

• a first gate structure positioned above a semiconducting substrate;
• a first sidewall spacer positioned adjacent said first gate structure;
• a first conductive gate contact contacting said first gate structure and an upper surface of said first sidewall spacer;
• a first conductive spacer contacting said first sidewall spacer and a sidewall of said first conductive gate contact, wherein said first conductive spacer does not contact said first gate structure;
• a second gate structure positioned above said semiconducting substrate;
• a second sidewall spacer positioned adjacent said second gate structure;
• a second conductive gate contact contacting said second gate structure and an upper surface of said second sidewall spacer;
• a first source/drain (SD) region positioned adjacent said second gate structure;
• a first SD contact contacting said first SD region;
• and
• a second conductive spacer contacting said second sidewall spacer and a sidewall of said first conductive gate contact, wherein said first conductive spacer contacts said first SD contact and said first gate structure.