Semiconductor device

A semiconductor device comprising:

• a semiconductor element having:
• a first semiconductor layer of a first conductivity type, the first semiconductor layer being a portion of a front surface side of a semiconductor substrate of the first conductivity type;
• a first semiconductor region of a second conductivity type provided selectively in the first semiconductor layer;
• a second semiconductor region of the first conductivity type provided selectively in the first semiconductor region;
• a gate insulating film provided in contact with a region of the first semiconductor region between the first semiconductor layer and the second semiconductor region;
• a gate electrode provided opposing the first semiconductor region, across the gate insulating film;
• a first electrode layer electrically connected to the first semiconductor region and the second semiconductor region;
• a second semiconductor layer of the first conductivity type, the second semiconductor layer being a portion of a rear side of the semiconductor substrate, in contact with the first semiconductor layer, the second semiconductor layer having an impurity concentration that is higher than an impurity concentration of the first semiconductor layer;
• and
• a second electrode layer in contact with the second semiconductor layer;
• and
• a diode arranged in the semiconductor substrate, the diode detecting a temperature of the semiconductor element by passing current through the diode based on the semiconductor substrate having a predetermined temperature, the diode including an anode region and a third electrode layer, wherein
• the anode region of the diode is electrically connected to the first semiconductor region and the second semiconductor region via the third electrode layer the third electrode layer being arranged on a front surface of the semiconductor substrate and not connected to the first electrode layer.