Contact plug without seam hole and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Yuan Ting, Jyu-Horng Shieh
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Abstract
A method includes forming a metallic layer over a Metal-Oxide-Semiconductor (MOS) device, forming reverse memory posts over the metallic layer, and etching the metallic layer using the reverse memory posts as an etching mask. The remaining portions of the metallic layer include a gate contact plug and a source/drain contact plug. The reverse memory posts are then removed. After the gate contact plug and the source/drain contact plug are formed, an Inter-Level Dielectric (ILD) is formed to surround the gate contact plug and the source/drain contact plug.
Claims20
A method comprising:
- depositing a conductive layer;
- forming a patterned photo resist over the conductive layer;
- forming a hard mask layer based on the patterned photo resist, wherein the hard mask layer has an inversed pattern than the patterned photo resist;
- and
- etching the conductive layer using the hard mask layer as an etching mask.
A method comprising:
- forming a conductive layer;
- forming a patterned photo resist over the conductive layer;
- filling an opening in the patterned photo resist with a portion of a hard mask;
- removing the patterned photo resist;
- etching the conductive layer using the hard mask as a portion of an etching mask;
- and
- removing the hard mask.
A method comprising:
- depositing a metal layer over a source/drain region and a gate electrode of a transistor;
- planarizing a top surface of the metal layer;
- forming a patterned sacrificial layer over the metal layer;
- forming hard masks between portions of the patterned sacrificial layer;
- removing the patterned sacrificial layer;
- and
- etching the metal layer using the hard masks as an etching mask to form a gate contact plug.
Dependencies are inferred from the claim text.