Hydrogenation and nitridization processes for reducing oxygen content in a film

A method of forming a structure in a semiconductor device, comprising:

• performing an oxygen-free plasma treatment process on a processing chamber component disposed within a processing chamber in which the processing chamber component is exposed to a non-oxidizing plasma comprising hydrogen;
• depositing a metal layer on a substrate within the processing chamber, the metal layer comprising oxygen;
• exposing a surface of the metal layer to a non-oxidizing plasma comprising hydrogen, while a first bias is applied to the substrate;
• exposing the exposed surface of the metal layer to a plasma comprising nitrogen, while a second bias is applied to the substrate;
• and
• performing a thermal anneal process on the metal layer.

A method of forming a structure in a semiconductor device, the method comprising:

• performing an oxygen-free plasma treatment process on a processing chamber component disposed within a processing chamber in which the processing chamber component is exposed to a non-oxidizing plasma comprising hydrogen;
• depositing a metal layer on a substrate within the processing chamber, the metal layer comprising oxygen;
• exposing a surface of the metal layer to a non-oxidizing plasma comprising hydrogen, while a first biasing voltage is applied to the substrate;
• and
• exposing the exposed surface of the metal layer to a plasma comprising nitrogen and having an RF power of about 100 W to about 2,500 W, while a second biasing voltage is applied to the substrate.