Back to results
US 10,504,778 B2Granted
Composite contact plug structure and method of making same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Hung Lin, Sheng-Hsuan Lin, Chih-Wei Chang, You-Hua Chou, Chia-Lin Hsu
Life of this patent
Estimating the term…
Abstract
An embodiment contact plug includes a bilayer structure and a diffusion barrier layer on a sidewall and a bottom surface of the bilayer structure. The bilayer structure includes a conductive core and a conductive liner on a sidewall and a bottom surface of the conductive core. In the embodiment contact plug, the conductive liner comprises cobalt or ruthenium.
Claims20
A device comprising:
- a semiconductor substrate;
- a silicide region in the semiconductor substrate;
- a dielectric layer over the semiconductor substrate;
- a conductive film extending through the dielectric layer;
- and
- a contact plug extending through the dielectric layer to the silicide region, wherein the contact plug comprises:
- a diffusion barrier layer contacting and having a different material composition than the conductive film, the conductive film is disposed between the diffusion barrier layer and the dielectric layer, the diffusion barrier layer further contacting the silicide region;
- a conductive liner contacting a sidewall and a top surface of the diffusion barrier layer, the conductive liner comprises cobalt or ruthenium, and the conductive liner has a different material composition than the diffusion barrier layer;
- and
- a conductive core contacting a sidewall and a top surface of the conductive liner, the conductive core has a different material composition than the conductive liner.
7 more elements
A semiconductor device comprising:
- a dielectric layer;
- a contact plug in the dielectric layer, the contact plug comprising:
- a conductive core;
- a conductive liner forming interfaces with sidewalls and a bottom surface of the conductive core, the conductive liner under the conductive core having a first thickness measured between opposing lateral surfaces of the conductive liner, the conductive liner along a sidewall of the conductive core having a second thickness measured between opposing sidewalls of the conductive liner, and the first thickness is at least ten times the second thickness;
- and
- a diffusion barrier layer between the conductive liner and the dielectric layer;
- and
- a silicide region under the dielectric layer, wherein the contact plug extends to the silicide region.
5 more elements
A method for forming a contact plug, the method comprising:
- patterning an opening in a dielectric layer, the opening exposing a portion of a substrate;
- depositing a conductive film on sidewalls and a bottom surface of the opening;
- depositing a diffusion barrier layer in the opening over the conductive film;
- depositing a conductive liner in the opening over the diffusion barrier layer;
- depositing a conductive core in the opening over the conductive liner, wherein the conductive core and the conductive liner have different material compositions;
- and
- performing an anneal to form a silicide at the portion of the substrate, wherein performing the anneal completely consumes a first portion of the conductive film under the diffusion barrier layer while leaving a second portion of the conductive film between a sidewall of the diffusion barrier layer and the dielectric layer.
4 more elements
Dependencies are inferred from the claim text.