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US 10,504,749 B2Granted
Semiconductor device
AssigneeMitsubishi Materials Corporation
InventorsShuji Nishimoto, Yoshiyuki Nagatomo
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Abstract
A semiconductor device of the present invention includes a circuit layer formed of a conductive material, a semiconductor element mounted on a first surface of the circuit layer, and a ceramic substrate disposed on a second surface of the circuit layer, in which a Ag underlayer having a glass layer and a Ag layer laminated on the glass layer is formed on the first surface of the circuit layer, and the Ag layer of the Ag underlayer and the semiconductor element are directly joined together.
Claims5
A semiconductor device comprising:
- a circuit layer formed of a conductive material;
- a semiconductor element mounted on a first surface of the circuit layer;
- and
- a ceramic substrate disposed on a second surface of the circuit layer,
- wherein a Ag underlayer having a glass layer and a Ag layer laminated on the glass layer is formed on the first surface of the circuit layer,
- the Ag layer of the Ag underlayer and the semiconductor element are directly joined together,
- conductive particles made of crystalline particles containing at least one of Ag or Al are dispersed inside the glass layer, and
- glass particles are dispersed inside the Ag layer.
5 more elements
Dependencies are inferred from the claim text.