HKMG integration

A method, comprising:

• placing a substrate into a plasma processing chamber, wherein the substrate includes a gate structure disposed thereon and a photoresist disposed on the gate structure, wherein the gate structure includes two layers, the photoresist is disposed on a first portion of the two layers, and the two layers are made of different materials;
• forming a plasma in a plasma cavity of the plasma processing chamber;
• flowing radicals in the plasma to a processing region of the plasma processing chamber, wherein ions in the plasma are blocked from entering the processing region;
• and
• removing a second portion of the two layers of the gate structure disposed on the substrate by the radicals in an radical etching process, wherein the ions are blocked from entering the processing region during the radical etching process, wherein a temperature of the substrate during the removing of the second portion of the two layers ranges from about 60 degrees Celsius to about 300 degrees Celsius, wherein the first portion of the two layers is covered by the photoresist and a third portion of the two layers is exposed after the removing of the second portion of the two layers.

A method, comprising:

• placing a substrate into a plasma processing chamber, wherein the substrate includes a gate structure disposed on a high-k dielectric material and a photoresist disposed on the gate structure, wherein the gate structure includes two layers, the photoresist is disposed on a first portion of the two layers;
• forming a plasma in a plasma cavity of the plasma processing chamber;
• flowing radicals in the plasma to a processing region of the plasma processing chamber, wherein ions in the plasma are blocked from entering the processing region;
• removing a second portion of the two layers of the gate structure by the radicals in an radical etching process, wherein the ions are blocked from entering the processing region during the radical etching process, wherein a temperature of the substrate during the removing of the second portion of the two layers ranges from about 60 degrees Celsius to about 300 degrees Celsius, wherein the first portion of the two layers is covered by the photoresist and a third portion of the two layers is exposed after the removing of the second portion of the two layers;
• and
• removing the photoresist and residue radicals disposed on the substrate.