Method for processing target object

A method for processing a target object, the method comprising:

• measuring a width of a mask pattern of a mask provided on a surface of a target layer included in a target object for each of a plurality of areas formed on the surface of the target layer;
• calculating a positive difference value obtained by subtracting a predetermined reference value from the measured width of the mask pattern for each of the plurality of areas;
• adjusting a temperature of the target layer for each of the plurality of areas to an adjusted temperature to enable forming of a film having a film thickness corresponding to the difference value by using pre-acquired correspondence data indicating correspondence between the adjusted temperature and the film thickness of the film having the film thickness corresponding to the difference value to be deposited on the surface of the mask on the target layer;
• and
• forming the film having the film thickness of the difference value for each of the plurality of areas on the surface of the mask of the target object by using an atomic layer deposition, after the adjusting to the adjusted temperature.

A method for processing a target object, the method comprising:

• a first step of adjusting a width of a pattern of a first mask provided on a surface of a first film of a target layer of a target object;
• a second step of etching the first film using the first mask after the first step to form a second mask;
• a third step of adjusting a width of a pattern of the second mask;
• and
• a fourth step of etching the target layer using the second mask the width of which is adjusted,
• the first step includes:
• measuring the width of the pattern of the first mask for each of a plurality of areas formed in the first film;
• calculating a positive difference value obtained by subtracting a predetermined reference width from the measured value of the width for each of the plurality of areas;
• adjusting a temperature of the target layer for each of the plurality of areas to an adjusted temperature to enable forming of a film having a film thickness corresponding to the difference value by using pre-acquired correspondence data indicating correspondence between the adjusted temperature and the film thickness of the film having the film thickness corresponding to the difference value to be deposited on the surface of the mask on the target layer;
• and
• forming the film having the film thickness of the difference value for each of the plurality of areas on the surface of the mask of the target object by using an atomic layer deposition, after the adjusting to the adjusted temperature, and
• the third step includes:
• measuring the width of the pattern of the second mask for each of a plurality of areas;
• calculating a positive difference value obtained by subtracting a predetermined reference width from the measured value of the width for each of the plurality of areas;
• adjusting a temperature of the target layer for each of the plurality of areas to an adjusted temperature to enable forming of a film having a film thickness corresponding to the difference value by using pre-acquired correspondence data indicating correspondence between the adjusted temperature and the film thickness of the film having the film thickness corresponding to the difference value to be deposited on the surface of the second mask on the target layer;
• and
• forming the film having the film thickness of the difference value for each of the plurality of areas on the surface of the mask of the target object by using an atomic layer deposition, after the adjusting to the adjusted temperature.