Semiconductor manufacturing method and plasma processing apparatus

A plasma processing apparatus comprising:

• a stage on which an object to be processed is placed;
• a gas supply unit configured to supply a gas;
• and
• a control unit,
• wherein the control unit is configured to perform control for
• etching an insulating film over a conductive layer of an object to be processed into a pattern of a mask, and exposing the conductive layer to a recessed portion formed in the insulating film;
• and
• forming an organic film in the recessed portion of the insulating film to which the conductive layer is exposed,
• in the forming of the organic film,
• maintaining an inside of a chamber at a predetermined pressure, cooling a stage to a temperature of −20° C. or less, and placing the object to be processed on the stage,
• supplying a gas including a gas containing a low vapor pressure material to the inside of the chamber, and
• generating plasma from the gas including the gas containing the low vapor pressure material, and causing precursors generated from the low vapor pressure material and included in the plasma to be deposited on the conductive layer such that the organic film is formed.