Focus ring for plasma etcher

A method comprising:

• placing a wafer on a chuck disposed within a chamber of an etching system, the chuck being encircled by a focus ring;
• while performing an etching process on the wafer, adjusting a direction of ions used during the etching processes to a first desired ion direction by adjusting a vertical position of the focus ring relative to the wafer to a first desired vertical position;
• and
• while performing the etching process on the wafer, adjusting the direction of ions used during the etching processes to a second desired ion direction by adjusting the vertical position of the focus ring relative to the wafer to a second desired vertical position, the second desired vertical position being different from the first desired vertical position, the second desired ion direction being different from the first desired ion direction.

A method comprising:

• mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being surrounding by a focus ring;
• and
• while performing an etching process on the wafer:
• adjusting an etch direction to a first desired etch direction by:
• detecting, by a detector of the etching system, a detected vertical position of the focus ring;
• and
• moving, by a focus ring control system of the etching system, the focus ring relative to the wafer from the detected vertical position to a first desired vertical position;
• and
• adjusting the etch direction to a second desired etch direction by:
• moving, by the focus ring control system, the focus ring relative to the wafer from the first desired vertical position to a second desired vertical position, the second desired vertical position being different from the first desired vertical position, the second desired etch direction being different from the first desired etch direction.