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US 10,504,734 B2Granted
Semiconductor device and methods of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJung-Shiung Tsai, Chung-Chiang Wu, Wei-Fan Liao, Han-Ti Hsiaw
Life of this patent
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Abstract
A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.
Claims20
A device comprising:
- a high-K dielectric layer over a substrate;
- a first barrier layer over the high-K dielectric layer;
- a work function layer over the high-K dielectric layer, wherein the work function layer has a fluorine concentration of between about 0.1%-atomic and about 1.5%-atomic;
- a second barrier layer over the work function layer;
- a conductive layer over the second barrier layer;
- a first metal layer over the conductive layer, the first metal layer comprising a fluorine by-product;
- and
- a second metal layer over the first metal layer, the second metal layer comprising a fluorine by-product.
5 more elements
A device comprising:
- a semiconductor fin;
- a gate structure over the semiconductor fin, the gate structure comprising:
- a gate dielectric;
- a work function layer over the gate dielectric, the work function layer having an atomic concentration of fluorine between about 0.1%-atomic and about 1.5%-atomic;
- a first barrier layer over the work function layer;
- a first metal layer over the first barrier layer;
- and
- a second metal layer over the first metal layer, the second metal layer having a higher concentration of fluorine atoms than the first metal layer.
5 more elements
A device comprising:
- a semiconductor fin extending from a semiconductor substrate;
- spacers located over the semiconductor fin, a first region being located between the spacers;
- a gate dielectric located within the first region;
- a first work function layer within the first region and over the gate dielectric, the first work function layer having a concentration gradient of fluorine, the concentration gradient of fluorine having a maximum concentration no greater than 1.5%-atomic;
- and
- a fill material over the first work function layer within the first region, the fill material comprising fluorine at a higher concentration than the maximum concentration within the first work function layer.
3 more elements
Dependencies are inferred from the claim text.